Infineon Launches 1200 V TRENCHSTOP IGBT7 & EC7 Diode for Industrial Drives
Infineon Technologies introduces its 1200 V TRENCHSTOP IGBT7 and emitter‑controlled EC7 diode, engineered for higher power density, lower system cost, and reduced size. Packaged in the familiar Easy housing, these power modules meet the rigorous demands of industrial drive applications.
Built on a cutting‑edge micro‑pattern trench architecture, the TRENCHSTOP IGBT7 delivers significantly lower static losses compared to the IGBT4 line. Its on‑state voltage is reduced by 20%, translating into substantial loss savings—particularly valuable for drives operating at moderate switching frequencies. The modules support a maximum allowable overload junction temperature of 175 °C, and feature softer switching with enhanced controllability.
The new 1200 V TRENCHSTOP IGBT7 modules retain the same pinout as the IGBT4 series, simplifying design integration. They also enable higher output current in the same package—or equivalent current in a smaller footprint—allowing designers to create more compact inverter solutions. All variants use Infineon’s reliable PressFit mounting technology, ensuring low ohmic resistance and streamlined assembly.
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