ATP Electronics Secures DDR3 Supply with In‑House 8‑Gb Modules Amid DDR4 Transition

ATP Electronics has announced its commitment to provide its own high‑density DDR3 8‑Gb components, ensuring a reliable supply of DDR3 memory for networking and embedded systems that cannot yet transition to newer platforms.

With the industry rapidly moving to DDR4, several leading manufacturers have already declared end‑of‑life (EOL) for DDR3 modules that rely on 8‑Gb chips, and have issued EOL notices for the underlying components.

ATP’s proprietary DDR3 modules are built from rigorously characterized and tested 8‑Gb ICs. Manufactured to ATP’s exacting standards using a 2‑nm process technology, each chip undergoes an extensive test program that enhances overall module performance.

Designed to be free of row‑hammer vulnerabilities, ATP’s DDR3 components eliminate the risk of random bit flips caused by charge leakage. At the module level, a 100 % test during burn‑in (TDBI) is integrated into production to guarantee top‑tier quality.

Available in monolithic 1‑chip‑select (1CS) and dual‑chip‑select (2CS) configurations, ATP offers a range of memory modules:

• 1CS DIMMs, SO‑DIMMs and Mini‑DIMMs at 16 GB and 1600 MT/s.
• 2CS DIMMs from 16 GB to 32 GB at 1333 MT/s or 1600 MT/s.
• 2CS Mini‑DIMMs at 8 GB and 1600 MT/s.
• ECC and non‑ECC options across all form factors.

ATP remains fully committed to supporting legacy memory requirements. In September 2018, ATP signed a partnership agreement with Micron Technology to ensure continued availability of Micron DDR2 SO‑DIMMs, UDIMMs and RDIMMs after Micron’s EOL announcements. Under the agreement, ATP manufactures DDR2 DRAM modules for customers who still rely on platforms that support these memory types.