ergFET: NASA’s Advanced Solid‑State Sensor for Detecting Electric Fields and Characterizing Materials
NASA’s Langley Research Center has developed a solid-state integrated circuit based on a field effect transistor (FET). Called ergFET, the sensor characterizes the electronic properties of materials, allowing for detection of items like baggage, wiring, and liquids, and can even be used for medical imaging such as remote EKG.
This equilibrium-reversing-gate field effect transistor (ergFET) deploys an electrode near the gate of the transistor to control and reverse leakage currents that are typical in transistors and can lead to measurement errors. It can be built into an array to enable higher-resolution imaging and is a solid-state device free of moving parts. This enables portable and handheld sensor designs.
NASA is actively seeking licensees to commercialize this technology. Please contact NASA’s Licensing Concierge at This email address is being protected from spambots. You need JavaScript enabled to view it. or call 202-358-7432 to initiate licensing discussions. Follow this link here for more information.
Sensor
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