World’s First 2D, Non-Silicon Computer Developed
The Pennsylvania State University, University Park, PA
This conceptual illustration of a computer based on 2D molecules displays an actual scanning electron microscope image of the computer fabricated by a team by researchers at Penn State. The keyboard features highlighted keys labeled with the abbreviations for molybdenum disulfide and tungsten diselenide, representing the two 2D materials used to develop the transistors in the computer. (Image: Krishnendu Mukhopadhyay/Penn State)In a world first, researchers have used 2D materials, which are only an atom thick and retain their properties at that scale, unlike silicon, to develop a computer capable of simple operations. The development, published June 11 in Nature, represents a major leap toward the realization of thinner, faster and more energy-efficient electronics, the researchers said. They created a complementary metal-oxide semiconductor (CMOS), which is at the heart of nearly every modern electronic device, without relying on silicon. Instead, they used two different 2D materials to develop both types of transistors needed to control the electric current flow in CMOS computers: molybdenum disulfide for n-type transistors and tungsten diselenide for p-type transistors.
“Silicon has driven remarkable advances in electronics for decades by enabling continuous miniaturization of field-effect transistors (FETs),” said Saptarshi Das, the Ackley Professor of Engineering and professor of engineering science and mechanics at Penn State, who led the research. FETs control current flow using an electric field, which is produced when a voltage is applied. “However, as silicon devices shrink, their performance begins to degrade. Two-dimensional materials, by contrast, maintain their exceptional electronic properties at atomic thickness, offering a promising path forward.”
Das explained that CMOS technology requires both n-type and p-type semiconductors working together to achieve high performance at low power consumption — a key challenge that has stymied efforts to move beyond silicon. Although previous studies demonstrated small circuits based on 2D materials, scaling to complex, functional computers had remained elusive, Das said.
“That’s the key advancement of our work,” Das said. “We have demonstrated, for the first time, a CMOS computer built entirely from 2D materials, combining molybdenum disulfide and tungsten diselenide transistors.”
The team used metal-organic chemical vapor deposition (MOCVD) — a fabrication process that involves vaporizing ingredients, forcing a chemical reaction and depositing the products onto a substrate — to grow large sheets of molybdenum disulfide and tungsten diselenide and fabricate over 1,000 of each type of transistor.
By carefully tuning the device fabrication and post-processing steps, they were able to adjust the threshold voltages of both n- and p-type transistors, enabling the construction of fully functional CMOS logic circuits.
“Our 2D CMOS computer operates at low-supply voltages with minimal power consumption and can perform simple logic operations at frequencies up to 25 kilohertz,” said first author Subir Ghosh, a doctoral student pursuing a degree in engineering science and mechanics under Das’s mentorship.
Ghosh noted that the operating frequency is low compared to conventional silicon CMOS circuits, but their computer — known as a one instruction set computer — can still perform simple logic operations.
“We also developed a computational model, calibrated using experimental data and incorporating variations between devices, to project the performance of our 2D CMOS computer and benchmark it against state-of-the-art silicon technology,” Ghosh said. “Although there remains scope for further optimization, this work marks a significant milestone in harnessing 2D materials to advance the field of electronics.”
“Silicon technology has been under development for about 80 years, but research into 2D materials is relatively recent, only really arising around 2010,” Das said. “We expect that the development of 2D material computers is going to be a gradual process, too, but this is a leap forward compared to the trajectory of silicon.”
For more information, contact Ashley WennersHerron at This email address is being protected from spambots. You need JavaScript enabled to view it..
Composite material
- T107 Autoclave Epoxy Prepreg (BMI-CF) – High‑Strength, 150°C Operating Temperature
- SupremEX® 225XE T6PGQ Extruded Bar – High‑Strength AA2124 Aluminum for Aerospace
- CTF40A Cemented Carbide: High-Performance Tungsten Carbide for Superior Wear Protection
- Revolutionary Supercapacitor Matches Battery Energy While Delivering Superior Power
- BP11NPG Phenolic Sheet with Graphite Lubricant – High Wear Resistance
- Phenolic NP605 Sheet – Durable, Low-Resin Laminate for Hard, Flat Surfaces
- NP510A Epoxy Composite Sheet – High-Performance FR‑4 Grade Material
- High-Performance Melamine NP509 Sheet – Flame-Resistant, Arc-Resistant, and High-Strength
- Beam Bending Fundamentals for Advanced Composite Manufacturing
- Alumina-Zirconia 40% Abrasive – Superior Hardness & Precision