Winbond Unveils 2 Gb + 2 Gb NAND + LPDDR4x Multi‑Chip Package for 5G CPE

Winbond Electronics has introduced the W71NW20KK1KW, a 1.8‑V 2 Gb + 2 Gb NAND Flash and LPDDR4x memory solution packed into a compact 8.0 × 9.5 × 0.8 mm multi‑chip package (MCP). This integrated device combines durable SLC NAND Flash with high‑speed, low‑power LPDDR4x memory, offering ample capacity for 5G cellular modems designed as customer premises equipment (CPE) in residential and commercial settings.

While mobile 5G modems typically demand higher memory densities, static 5G CPE units can operate effectively with 2 Gb of NAND and 2 Gb of DRAM. By consolidating this memory combination into a single, space‑saving package, Winbond enables manufacturers to meet CPE system requirements while minimizing material and production costs.

The W71NW20KK1KW’s cost‑optimized architecture is expected to accelerate consumer adoption of 5G, positioning it as a viable alternative to traditional copper or optical xDSL links for last‑mile broadband.

The 149‑ball BGA MCP houses a 2 Gb SLC NAND Flash die and a 2 Gb LPDDR4x DRAM die. The SLC NAND offers exceptional endurance and data integrity, requiring only 4‑bit ECC for reliable operation; its 2 KB + 128 B page size also supports 8‑bit ECC when needed.

Configured with an 8‑bit data bus and organized into 64‑page blocks, the NAND die delivers a maximum page read time of 25 µs and a typical page program time of 250 µs, ensuring swift data access.

The LPDDR4x die runs at 1866 MHz, features an LVSTL‑11 interface, eight internal banks for parallel operation, and supports a peak data rate of 4267 MT/s, matching the high‑speed demands of 5G networks.