Winbond Launches 2Gb+2Gb NAND & LPDDR4x Memory for 5G CPE Modems

Winbond Electronics has unveiled the W71NW20KK1KW, a compact 1.8‑V dual‑die memory solution that merges 2 Gb of SLC NAND Flash with 2 Gb of LPDDR4x DRAM in an 8.0 × 9.5 × 0.8 mm multi‑chip package (MCP).

Designed specifically for 5G Customer Premises Equipment (CPE) modems, the W71NW20KK1KW delivers the optimal balance of endurance, speed, and power efficiency required for static 5G deployments.

Static 5G CPE units typically operate comfortably with 2 Gb of NAND and 2 Gb of DRAM, making the W71NW20KK1KW an ideal, cost‑effective solution that consolidates both memory types into a single 149‑ball BGA package.

By simplifying the memory stack, manufacturers can reduce board space, lower component counts, and cut production costs—accelerating the rollout of 5G as a viable alternative to copper or optical xDSL in the last mile.

The SLC NAND core offers outstanding endurance and data integrity; a 2 KB + 128 B page size allows the use of up to 8‑bit error‑correcting code (ECC) while the device only requires 4‑bit ECC for reliable operation.

With an 8‑bit wide interface and blocks of 64 pages, the NAND die achieves a maximum page read time of 25 µs and a typical page program time of 250 µs, ensuring rapid data access for demanding 5G workloads.

Winbond’s W71NW20KK1KW exemplifies the company’s commitment to delivering high‑performance, low‑cost memory solutions that empower next‑generation broadband deployments.