ST Microelectronics Showcases 28 nm FD‑SOI MCUs with Embedded PCM for Powertrain, ADAS, and Electrification

ST Microelectronics unveiled at IEDM 2018 the architecture and performance of a 28 nm FD‑SOI MCU featuring embedded Phase‑Change Memory (ePCM). These first‑in‑class MCUs are now sampling with alpha customers, passing field trials that meet automotive specifications, and are slated for full qualification in 2020.

Designed for powertrain control, secure gateways, safety/ADAS, and vehicle electrification, the ePCM‑based MCUs combine low power, high processing density, and large on‑chip memory – addressing the growing demands of modern automotive software. The technology satisfies AEC‑Q100 Grade 0, operates up to +165 °C, and guarantees firmware and data retention through high‑temperature soldering reflow and radiation immunity, ensuring maximum reliability.

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ST Microelectronics Showcases 28 nm FD‑SOI MCUs with Embedded PCM for Powertrain, ADAS, and Electrification

ST Microelectronics Showcases 28 nm FD‑SOI MCUs with Embedded PCM for Powertrain, ADAS, and Electrification