High‑Performance Tungsten‑Titanium Alloy Targets for Advanced Semiconductor Chips

Tungsten‑Titanium Alloy Targets for Advanced Semiconductor Chips

Tungsten‑titanium alloy is increasingly chosen as the diffusion barrier and bonding layer in new semiconductor devices because it combines excellent surface adhesion with outstanding thermal conductivity. The result is a target that delivers superior performance throughout the chip fabrication process.

Tungsten‑Titanium Alloy Target

Both tungsten and titanium contribute unique benefits: high density, exceptional purity, robust corrosion resistance, and minimal volumetric expansion. These properties suppress particle formation during deposition, ensuring high‑quality thin films.

Preparation Process

Below is a streamlined, high‑efficiency method for producing tungsten‑titanium alloy blanks suitable for batch production.

1. Combine tungsten powder (10–65 wt%) with titanium powder under an inert atmosphere to prevent oxidation.
2. Compress the homogeneous mixture into a billet using a mechanical press or cold isostatic press.
3. Place the billet in a vacuum sintering furnace and heat to fully densify the material.
4. After cooling, melt the sintered alloy in a non‑consumable vacuum arc furnace to obtain the final target.

Key advantages of this method:

• Simple, convenient workflow.
• Eliminates the low efficiency and uneven composition issues of traditional processes.
• Produces alloys with 10–60 wt% tungsten, ideal for large‑scale manufacturing.

Conclusion

We hope this overview clarifies the benefits and production of tungsten‑titanium alloy targets for semiconductor applications. For deeper insights into refractory metals and alloys, visit Advanced Refractory Metals (ARM).

Headquartered in Lake Forest, California, ARM is a global leader in supplying high‑quality refractory metals such as niobium, molybdenum, tantalum, rhenium, tungsten, titanium, and zirconium at competitive prices.